Without notch etching of high aspect ratio SOI structures using Yu pulsed plasma etching and deposition and alternating

摘要

According to the present invention, a method for preventing notching during the deposition cycle and etching of the substrate using an inductively coupled plasma source is provided. By this method, the inductively coupled plasma source is generated pulses in order to prevent charge accumulation on the substrate. Off state of an inductively coupled plasma source, is long enough to be able to flow out of the charges are generated, it is selected so that it is not long enough to etch rate is low due to a low duty cycle. Pulse generator may be controlled to occur only when the substrate is etched insulating layer is exposed. Well, the bias voltage may be to generate a pulse in out of phase or in phase with the pulse generation of the inductively coupled plasma source can be applied to the insulating layer a bias voltage.