Production manner and nitride semiconductor substrate null grating constant

摘要

PROBLEM TO BE SOLVED: To manufacture nitride semiconductor substrates with few crystal defects and of high quality by a simple method.;SOLUTION: On one plane of a compound semiconductor substrate 1 with a lattice constant of 0.30 nm to 0.36 nm in an a-axis direction and 0.48 nm to 0.58 nm in a c-axis direction, a first nitride semiconductor 4 is epitaxially grown at a temperature T₁. Then, a gas that is used at the time when the first nitride semiconductor layer 4 is formed is reacted with the substrate 1 at a temperature T₂ higher than the temperature T₁, so as to remove the substrate 1.;COPYRIGHT: (C)2005,JPO&NCIPI