The silicon solar array and those production methods of possessing the lanthanide which alters the spectrum

摘要

Purpose of this invention is to improve the efficiency of energy yield of the solar array. The silicon material by this invention, in order for the said material to permeate to the depth of approximately 60nm of layer, is doped making use of the lanthanide where or more of 1 or 2 kinds differs. The photon where the energy is at least 2 times that of the 1.2eV silicon material band gap is converted to two which possesses energy in the territory of the silicon band gap therefore with the excitation and recombination of the unpaired 4f electron of lanthanide photons at least. The further photon is offered for forming the electronic correct hole opposite as the result which possesses the favorable energy which is close to the silicon band gap.