首页> 外国专利> How to do the transmittance adjustment of the mask pattern in order to improve the process latitude

How to do the transmittance adjustment of the mask pattern in order to improve the process latitude

机译:如何进行掩模图案的透射率调整以提高工艺宽容度

摘要

A method of generating a mask for use in a photolithography process. The method includes the steps of determining a target mask pattern having a plurality of features to be imaged and an illumination system to be utilized to image the mask; identifying a critical pitch within the target pattern and optimizing illumination settings of the illumination system for imaging the critical pitch; identifying a forbidden pitch within the target pattern; and modifying the transmittance of the features having a pitch equal to or substantially equal to the forbidden pitch such that the exposure latitude of the features equal to or substantially equal to the forbidden pitch is increased. IMAGE
机译:一种产生用于光刻工艺的掩模的方法。该方法包括以下步骤:确定具有多个将被成像的特征的目标掩模图案以及将被用于对该掩模成像的照明系统;以及识别目标图案内的临界间距并优化照明系统的照明设置以对临界间距进行成像;识别目标图案内的禁止间距;并改变具有等于或基本上等于禁止间距的间距的特征的透射率,从而增加等于或基本上等于禁止间距的特征的曝光范围。 <图像>

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号