The field-effect transistor the ferroelectric memory unit and its production method

摘要

Topic Structure being simple, the field-effect transistor which is superior in data-hold quality the ferroelectric memory unit and these production methods are offered.SolutionsThe source territory 2 and the drain territory 3 is formed in baseplate 1, this source territory the ferroelectric membrane or ferroelectric layer 5 is formed on channel territory 4 with 2 and the drain territory 3. This time, ferroelectric layer 5 the inorganics strongly is formed with the induced electricity substance and the blend of the organic matter. Ferroelectric layer 5 the inorganics strongly forms the induced electricity substance and the mixed solution of the organic matter, applies this mixed solution on the baseplate and forms after forming ferroelectric layer, via the process which it calcines and etches this and. Selective figure Figure 2