Structure with a buried cavity and process to form a cavity embedded in the silicon body

摘要

PROBLEM TO BE SOLVED: To reduce the area where a cavity occupies on a silicon, and to form various forms of cavities by simply and economically form the cavity.;SOLUTION: A process for forming an embedded cavity 20 in a semiconductor material main body 11 comprises steps of: forming a mask 16 having a plurality of openings 18, each of which has a side surface or a dominant direction, having an inclination between 44°-46° to a specific crystalline plane of the semiconductor material body, on the top of the semiconductor material body; and anisotropically etching the semiconductor material body by using the mask.;COPYRIGHT: (C)2006,JPO&NCIPI