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Manufacturing method of the platinum content thin film due to the chemical vapor phase vapor deposition method which uses the organic platinum complex and the particular platinum complex

机译:通过使用有机铂络合物和特定的铂络合物的化学气相气相沉积法产生的铂含量薄膜的制造方法

摘要

As the organic platinum complex of this invention is shown with general system (1) is the new platinum complex which, it possesses fusion point low, it is superior in stability at the same time vis-a-vis the moisture, the air and heat, it is suitable for the production of the platinum content thin film with CVD method. Conversion 1 (In formula, X and Y the carbon count 1 which is good being substituted by the respective independence, with alkoxy group - 8 direct or shows the alkyl group of ramification condition, Z, the hydrogen atom, or carbon count 1 - 4 direct or shows the alkyl group of ramification condition, as for L, the arukokishiarukeniru basis (was substituted direct or the arukeniru basis of ramification condition) shows with alkoxy group.)
机译:如本发明的有机铂络合物在一般体系(1)中所示,是新型的铂络合物,其具有低的熔点,同时相对于水分,空气和热量具有优异的稳定性。 ,它适用于用CVD法生产铂含量的薄膜。 <转化1>(式中,X和Y分别为烷氧基,碳原子数1被各自的独立性取代的碳原子数1为8的直链或表示分枝条件的烷基,Z,氢原子或碳原子数1 -4直接或表示分支条件的烷基,至于L,用烷氧基表示arukokishiarukeniru基(被分支条件的直接或替代的arukeniru基础)。

著录项

  • 公开/公告号JPWO2009011425A1

    专利类型

  • 公开/公告日2010-09-24

    原文格式PDF

  • 申请/专利权人 宇部興産株式会社;

    申请/专利号JP20090523687

  • 发明设计人 角田 巧;長谷川 千尋;二瓶 央;

    申请日2008-07-18

  • 分类号C07C49/92;C07F15/00;C23C16/18;

  • 国家 JP

  • 入库时间 2022-08-21 18:57:58

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