首页> 外国专利> PHOTOMASK SUBSTRATE, PHOTOMASK SUBSTRATE MOLDING MEMBER, PHOTOMASK SUBSTRATE MANUFACTURING METHOD, PHOTOMASK, AND EXPOSURE METHOD USING PHOTOMASK

PHOTOMASK SUBSTRATE, PHOTOMASK SUBSTRATE MOLDING MEMBER, PHOTOMASK SUBSTRATE MANUFACTURING METHOD, PHOTOMASK, AND EXPOSURE METHOD USING PHOTOMASK

机译:照相底材,照相底材模制件,照相底材制造方法,照相底版以及使用照相底版的曝光方法

摘要

A photomask substrate having a substantially uniform thickness, which includes a first surface on which a mask pattern is to be formed, and a second surface, which are continuous curved surfaces. The first surface has a quadrangular shape including a first set of opposing sides and a second set of opposing sides, and has a support portion at an end along each side of the first set. When the photomask substrate is held so that the first surface is substantially vertical, a reference plane parallel to the tangential plane of the first surface at the center point of the first surface is used as the photomask substrate. On the other hand, it is defined on the side closer to the first surface than the second surface. At this time, the first distance along the thickness direction between the center point of the first surface and the reference plane is along the thickness direction between the midpoint of each side of the second set and the reference plane. Shorter than the second distance.
机译:具有基本均匀厚度的光掩模基板,该光掩模基板包括其上要形成掩模图案的第一表面和为连续弯曲表面的第二表面。第一表面具有包括第一组相对侧和第二组相对侧的四边形形状,并且在沿着第一组各侧的端部处具有支撑部。当保持光掩模基板使得第一表面基本垂直时,将平行于第一表面在第一表面的中心点处的切平面的参考平面用作光掩模基板。另一方面,它被限定在比第二表面更靠近第一表面的一侧。此时,第一表面的中心点与基准平面之间的沿着厚度方向的第一距离是第二组的每侧的中点与基准平面之间的沿着厚度方向的第一距离。比第二距离短。

著录项

  • 公开/公告号JPWO2008139848A1

    专利类型

  • 公开/公告日2010-07-29

    原文格式PDF

  • 申请/专利权人 株式会社ニコン;

    申请/专利号JP20090514063

  • 发明设计人 阿邊 哲也;新田 祐平;木村 幸泰;

    申请日2008-04-22

  • 分类号G03F1/14;H01L21/027;

  • 国家 JP

  • 入库时间 2022-08-21 18:57:40

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