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The non-volatile memory device and its production mannered null 1st channel field which have 2
The non-volatile memory device and its production mannered null 1st channel field which have 2
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机译:具有2的非易失性存储设备及其生产方式为空的第一通道字段
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摘要
The present invention includes a method of fabricating a non-volatile memory device having two transistors for two-bit operations to improve electron trapping efficiency and integration degree of the non-volatile memory device, and a method of driving the non-volatile memory device. The EEPROM device according to the present invention comprises a silicon substrate including a first and a second channel area, a first and a second conductive gate on the first and the second channel area, respectively, facing each other, a first and a second insulation layer in the bottom of the first and the second gate, and a first and a second junction area of a second conductive type between the first and the second channel area overlapping with the first and the second conductive gate.
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