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1-TRANSISTOR TYPE DRAM CELL, A DRAM DEVICE AND MANUFACTURING METHOD THEREFORE, DRIVING CIRCUIT FOR DRAM, AND DRIVING METHOD THEREFOR
1-TRANSISTOR TYPE DRAM CELL, A DRAM DEVICE AND MANUFACTURING METHOD THEREFORE, DRIVING CIRCUIT FOR DRAM, AND DRIVING METHOD THEREFOR
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机译:1-晶体管型DRAM单元,其DRAM装置及其制造方法,DRAM的驱动电路及其驱动方法
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摘要
The present invention relates to an 1-transistor DRAM cell, a DRAM device and a manufacturing method therefor, a driving circuit for a DRAM, a driving method therefore, and a driving method for an 1-transistor DRAM, and a double-gate type 1-transistor DRAM. The present invention comprises a data hold process biasing a word line at a negative voltage level and biasing a sensing line and a bit line at a first constant voltage level; a data purging process resetting data by biasing the word line and the bottom word line at a second constant voltage level and biasing the sensing line and the bit line at the first constant voltage level; and a data write process biasing the word line and the bottom word line at the second constant voltage level and supplying a write data to the bit line.
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