首页>
外国专利>
1-transistor type DRAM cell, a DRAM device and manufacturing method therefore, driving circuit for DRAM, and driving method therefor
1-transistor type DRAM cell, a DRAM device and manufacturing method therefore, driving circuit for DRAM, and driving method therefor
展开▼
机译:1-晶体管型DRAM单元,DRAM装置及其制造方法,DRAM的驱动电路及其驱动方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention relates to an 1-transistor DRAM cell, a DRAM device and a manufacturing method therefor, a driving circuit for a DRAM, a driving method therefore, and a driving method for an 1-transistor DRAM, and a double-gate type 1-transistor DRAM. The present invention comprises a data hold process biasing a word line at a negative voltage level and biasing a sensing line and a bit line at a first constant voltage level; a data purging process resetting data by biasing the word line and the bottom word line at a second constant voltage level and biasing the sensing line and the bit line at the first constant voltage level; and a data write process biasing the word line and the bottom word line at the second constant voltage level and supplying a write data to the bit line.
展开▼