ELECTROSTATIC DISCHARGE FAILURE PROTECTIVE ELEMENT, ELECTROSTATIC DISCHARGE FAILURE PROTECTIVE CIRCUIT, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

An electrostatic discharge failure protective element (50) is provided with second conductivity type source region (4) and drain region (5), which are formed at a prescribed interval to sandwich a channel region (3) on the surface of a first conductivity type semiconductor substrate (1); a first conductivity type well region (7) formed to cover the source region; a second conductivity type buried layer (8) formed below the first conductivity type well region; a second conductivity type first impurity region (9a) formed between the drain region and the buried layer to constitute a current path; and a second conductivity type second impurity region (9b) to isolate the well region and the semiconductor substrate one from the other.