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Methods of fabricating semiconductor devices and semiconductor devices including a contact plug processed by rapid thermal annealing
Methods of fabricating semiconductor devices and semiconductor devices including a contact plug processed by rapid thermal annealing
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机译:半导体器件的制造方法以及包括通过快速热退火处理的接触塞的半导体器件
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摘要
A method of fabricating a semiconductor device includes depositing tungsten on an insulating layer in which a contact hole is formed by chemical vapor deposition (CVD), performing chemical mechanical planarization (CMP) on the tungsten to expose the insulating layer and form a tungsten contact plug, and performing rapid thermal oxidation (RTO) on the tungsten contact plug in an oxygen atmosphere such that the tungsten expands volumetrically into tungsten oxide (WξOψ).
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机译:一种半导体器件的制造方法,包括在通过化学气相沉积(CVD)在其中形成接触孔的绝缘层上沉积钨,在钨上进行化学机械平坦化(CMP)以暴露绝缘层并形成钨接触塞,并在氧气气氛中对钨接触塞进行快速热氧化(RTO),以使钨在体积上膨胀成氧化钨(W ξ Sub> O ψ Sub>)。
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