Micro-Electromechanical Resonators Having Boron-Doped and Boron-Assisted Aluminum-Doped Resonator Bodies Therein

摘要

A micro-electromechanical resonator includes a resonator body having a semiconductor region therein doped with boron to a level greater than about 1×10¹⁸ cm⁻³ and even greater than about 1×10¹⁹ cm⁻³, in order to obtain reductions in the temperature coefficient of frequency (TCF) of the resonator over a relatively large temperature range. Still further improvements in TCF can be achieved by degenerately doping the resonator body with boron and/or by boron-assisted aluminum doping of the resonator body.