Nano-magnetic memory device and method of manufacturing the device

摘要

A nano-magnetic memory device capable of writing/reading multi data in the nano-magnetic memory cell by controlling an amount of an induced current which is formed after a magnetic nanodot is perturbed and rearranged according to a word line current flowing from the first electrode through a nanowire of the nano-magnetic memory device to the second electrode. Consequently, a size of the memory device is reduced and a density of the memory device may be improved by providing a simplified nano-magnetic memory device of which a cell size is smaller.