NAND MEMORY CELL ARRAY, NAND FLASH MEMORY HAVING NAND MEMORY CELL ARRAY, DATA PROCESSING METHOD FOR NAND FLASH MEMORY

摘要

A NAND memory cell array which can be programmed in a hot carrier injection scheme, a NAND flash memory having the NAND memory cell array, and a data processing method for the NAND flash memory are provided. The NAND memory cell array includes one select transistor and at least two storage transistors. The NAND memory cell array can be programmed by controlling a bulk bias voltage and a voltage applied to a gate in the hot carrier injection scheme.