首页>
外国专利>
Metal High-K (MHK) Dual Gate Stress Engineering Using Hybrid Orientation (HOT) CMOS
Metal High-K (MHK) Dual Gate Stress Engineering Using Hybrid Orientation (HOT) CMOS
展开▼
机译:使用混合方向(HOT)CMOS的金属高K(MHK)双栅极应力工程
展开▼
页面导航
摘要
著录项
相似文献
摘要
A hybrid orientation technology (HOT) CMOS structure is comprised of a tensile stressed NFET gate stack and a compressively stressed PFET gate stack, where each gate stack is comprised of a high dielectric constant oxide/metal, and where the source of the stress in the tensile stressed NFET gate stack and the compressively stressed PFET gate stack is the metal in the high-k metal gate stack.
展开▼