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ELECTRONIC CIRCUIT FOR MEASUREMENT OF TRANSISTOR VARIABILITY AND THE LIKE

机译:电子电路,用于测量晶体管的可变性和相似性

摘要

An electronic circuit includes an output terminal and at least a first measuring FET. The second drain-source terminals of a plurality of FETS to be tested are interconnected with the first drain-source terminal of the first measuring FET and the output terminal. The second drain-source terminal of the first measuring FET is interconnected with a first biasing terminal. The first drain-source terminals of the FETS to be tested are interconnected with a second biasing terminal. A state machine is coupled to the gates of the FETS to be tested and the gate of the first measuring FET. The state machine is configured to energize the gate of the first measuring FET and to sequentially energize the gates of the FETS to be tested, so that an output voltage appears on the output terminal. Circuitry to compare the output voltage to a reference value is also provided. The gate of the first measuring field effect transistor is energized; the gates of the field effect transistors to be tested are sequentially energized, whereby an output voltage appears on the output terminal; and the output voltage is compared to the reference value.
机译:电子电路包括输出端子和至少第一测量FET。多个要测试的FET的第二漏极-源极端子与第一测量FET的第一漏极-源极端子和输出端子互连。第一测量FET的第二漏极-源极端子与第一偏置端子互连。要测试的FET的第一漏极-源极端子与第二偏置端子互连。状态机耦合到要测试的FET的栅极和第一测量FET的栅极。该状态机被配置为激励第一测量FET的栅极,并顺序地激励要测试的FET的栅极,使得输出电压出现在输出端子上。还提供了将输出电压与参考值进行比较的电路。第一测量场效应晶体管的栅极通电;被测试的场效应晶体管的栅极被依次通电,从而在输出端子上出现输出电压。然后将输出电压与参考值进行比较。

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