首页>
外国专利>
INTEGRATED TRENCH MOSFET AND JUNCTION BARRIER SCHOTTKY RECTIFIER WITH TRENCH CONTACT STRUCTURES
INTEGRATED TRENCH MOSFET AND JUNCTION BARRIER SCHOTTKY RECTIFIER WITH TRENCH CONTACT STRUCTURES
展开▼
机译:带有沟槽接触结构的集成沟槽MOSFET和结型势垒肖特基整流器
展开▼
页面导航
摘要
著录项
相似文献
摘要
A trench MOSFET in parallel with trench junction barrier Schottky rectifier with trench contact structures is formed in single chip. The present invention solves the drawback brought by some prior arts, for example, the large area occupied by planar contact structure and high gate-source capacitance. As the electronic devices become more miniaturized, the trench contact structures of this invention are able to be shrunk to achieve low specific on-resistance of Trench MOSFET, and low Vf and reverse leakage current of the Schottky Rectifier.
展开▼