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Current-controlled CMOS (C3MOS) fully differential integrated delay cell with variable delay and high bandwidth

机译:具有可变延迟和高带宽的电流控制CMOS(C3MOS)全差分集成延迟单元

摘要

Current-controlled CMOS (C3MOS) fully differential integrated delay cell with variable delay and high bandwidth. A novel implementation includes a wideband differential transistor pair and a cross-coupled differential transistor pair. The wideband differential transistor pair can be implemented with appropriate input and output impedances to extend its bandwidth for use in broadband applications. These two stages, (1) buffer stage (or data amplifier stage) and (2) cross-coupled differential pair stage, are both very fast operating stages. This design does not incur any increased loading to previous or subsequent stages in a device. In addition, there is no increase in the total amount of current that is required.
机译:具有可变延迟和高带宽的电流控制CMOS(C3MOS)全差分集成延迟单元。一种新颖的实现包括宽带差分晶体管对和交叉耦合的差分晶体管对。宽带差分晶体管对可以实现适当的输入和输出阻抗,以扩展其带宽,以用于宽带应用。这两个阶段(1)缓冲阶段(或数据放大器阶段)和(2)交叉耦合差分对阶段都是非常快的工作阶段。这种设计不会给设备的上一个阶段或后续阶段增加任何负载。另外,所需的电流总量没有增加。

著录项

  • 公开/公告号US2010019817A1

    专利类型

  • 公开/公告日2010-01-28

    原文格式PDF

  • 申请/专利权人 JUN CAO;

    申请/专利号US20090571553

  • 发明设计人 JUN CAO;

    申请日2009-10-01

  • 分类号H03H11/26;

  • 国家 US

  • 入库时间 2022-08-21 18:53:02

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