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Evaluation of delay mismatch due to process variations in CMOS integrated circuits.

机译:评估由于CMOS集成电路中的工艺差异而引起的延迟不匹配。

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摘要

The consideration of device fluctuation is an important theme in designing CMOS integrated circuits, particularly on the deep submicron technology (90 and 65 nm). In digital circuit, effect of intra-die variations on performances of circuit especially becomes important consideration in design. However, since intra-die variation is much more complex and difficult to measure than inter-die variations, until now, there is no acknowledged model to describe it comprehensively, although many works engage in this topic.; This master thesis investigates method of characterizing the effect of die-to-die and intra-die variations on propagation delays by evaluating single cell delay and delay mismatch in Ring Oscillator (RO). A test circuit is presented including its design, simulation and implementation. Single cell delay mismatch will first be introduced and typical application circuits suffering from this delay mismatch will be discussed as well. And then, the master thesis will study some knowledge relating to process variations and analyze theoretically this variation impact on performances of integrated circuits. Next, some previous works will be reviewed about process variations analysis and characterization methods with test circuits, and their possible drawbacks will be reported. After that, a proposed test architecture, which is based on modified RO, is presented. This novel test structure can be used to evaluate propagation delay and delay mismatch in RO by only measuring period (frequency) of each RO with conventional frequency measurement equipment.; The design considerations and implementation along with creating symmetrical architecture and interconnect effect in the layout are also investigated in detail in this master thesis. Both pre-layout and post-layout simulation results indicate the accuracy and the feasibility of our method. The test chip was implemented with TSMC 0.18um CMOS technology; it's easily reused for submicron technologies. The proposed technique to characterize the effect of process variations on delays can help designers to solve the problems caused by process variability in their new circuit design.
机译:器件波动的考虑是设计CMOS集成电路的重要主题,尤其是在深亚微米技术(90和65 nm)上。在数字电路中,芯片内部变化对电路性能的影响尤其成为设计中的重要考虑因素。然而,由于管芯内部的变异比管芯内部的变异要复杂得多且难以衡量,因此,尽管许多作品都涉及该主题,但到目前为止,尚无公认的模型来对其进行全面描述。本硕士论文研究了通过评估环形振荡器(RO)中的单单元延迟和延迟失配来表征芯片间和芯片内变化对传播延迟的影响的方法。给出了一个测试电路,包括其设计,仿真和实现。首先将介绍单单元延迟失配,还将讨论遭受该延迟失配的典型应用电路。然后,硕士论文将研究与工艺变化有关的一些知识,并从理论上分析这种变化对集成电路性能的影响。接下来,将回顾一些先前的工作,这些工作涉及具有测试电路的过程变化分析和表征方法,并将报告其可能的缺点。之后,提出了一种基于修改后的RO的建议测试架构。这种新颖的测试结构可用于仅通过使用常规频率测量设备测量每个RO的周期(频率)来评估RO中的传播延迟和延迟失配。本硕士论文还详细研究了设计注意事项和实现,以及在布局中创建对称的体系结构和互连效果。布局前和布局后的仿真结果均表明了该方法的准确性和可行性。测试芯片采用台积电0.18um CMOS技术实现;它很容易用于亚微米技术。所提出的表征工艺变化对延迟的影响的技术可以帮助设计人员解决在其新电路设计中由工艺变化引起的问题。

著录项

  • 作者

    Zhou, Bo.;

  • 作者单位

    Ecole Polytechnique, Montreal (Canada).;

  • 授予单位 Ecole Polytechnique, Montreal (Canada).;
  • 学科 Engineering Electronics and Electrical.
  • 学位 M.Sc.A.
  • 年度 2007
  • 页码 104 p.
  • 总页数 104
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 无线电电子学、电信技术;
  • 关键词

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