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THREE-DIMENSIONAL SEMICONDUCTOR DEVICES INCLUDING SELECT GATE PATTERNS HAVING DIFFERENT WORK FUNCTION FROM CELL GATE PATTERNS
THREE-DIMENSIONAL SEMICONDUCTOR DEVICES INCLUDING SELECT GATE PATTERNS HAVING DIFFERENT WORK FUNCTION FROM CELL GATE PATTERNS
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机译:三维半导体器件,包括具有与细胞门模式不同的工作功能的精选门模式
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摘要
A three-dimensional semiconductor device includes a vertical channel pattern on the substrate, a plurality of cell gate patterns and a select gate pattern stacked on the substrate along the sidewall of the vertical channel pattern, a charge storage pattern between the vertical channel pattern and the cell gate pattern and a select gate pattern between the vertical channel pattern and the select gate pattern. The select gate pattern has a different work function from the cell gate pattern
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