首页>
外国专利>
Lithographic process using a nanowire mask, and nanoscale devices fabricated using the process
Lithographic process using a nanowire mask, and nanoscale devices fabricated using the process
展开▼
机译:使用纳米线掩模的光刻工艺,以及使用该工艺制造的纳米级器件
展开▼
页面导航
摘要
著录项
相似文献
摘要
The disclosure pertains to a method for making a nanoscale filed effect transistor structure on a semiconductor substrate. The method comprises disposing a mask on a semiconductor upper layer of a multi-layer substrate, and removing areas of the upper layer not covered by the mask in a nanowire lithography process. The mask includes two conductive terminals separated by a distance, and a nanowire in contact with the conductive terminals across the distance. The nanowire lithography may be carried out using a deep-reactive-ion-etching, which results in an integration of the nanowire mask and the underlying semiconductor layer to form a nanoscale semiconductor channel for the field effect transistor.
展开▼