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Solution for polymer and capping layer removing with wet dipping in HK metal gate etching process
Solution for polymer and capping layer removing with wet dipping in HK metal gate etching process
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机译:HK金属栅刻蚀工艺中湿浸去除聚合物和覆盖层的解决方案
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摘要
The present disclosure provides a method for making metal gate stacks of a semiconductor device. The method includes applying a first etching process to the substrate to remove a polysilicon layer and a metal gate layer on the substrate; applying a diluted hydrofluoric acid (HF) to the substrate to remove polymeric residue; thereafter applying to the substrate with a cleaning solution including hydrochloride (HCl), hydrogen peroxide (H2O2) and water (H2O); applying a wet etching process diluted hydrochloride (HCl) to the substrate to remove a capping layer; and applying to the substrate with a second etching process to remove a high k dielectric material layer.
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