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Magneto-resistance effect element and thin-film magnetic head having non-magnetic spacer layer composed of one semiconductor layer and two metal layers
Magneto-resistance effect element and thin-film magnetic head having non-magnetic spacer layer composed of one semiconductor layer and two metal layers
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机译:具有由一个半导体层和两个金属层组成的非磁性间隔层的磁阻效应元件和薄膜磁头
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摘要
A magneto-resistance effect element used for a thin film magnetic head is configured by a buffer layer, an anti-ferromagnetic layer, a pinned layer, a spacer layer, a free layer, and a cap layer, which are laminated in this order, and a sense current flows through the element in a direction orthogonal to the layer surface, via a lower shield layer and a upper shield layer. The pinned layer comprises an outer layer in which a magnetization direction is fixed, a non-magnetic intermediate layer, and an inner layer which is a ferromagnetic layer. The spacer layer comprises a first and second non-magnetic metal layer, and a semiconductor layer. The first and second non-magnetic metal layer and comprise CuPt films having a thickness of more than 0 nm but no more than 2.0 nm, and the Pt content ranges from a minimum of 5 to a maximum of 25 at %.
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