首页> 外国专利> Magneto-resistive effect device having a spacer layer of a semiconductor layer interposed between first and second nonmagnetic metal layers and a work function control layer for use in a thin-film magnetic head usable in a head gimbal assembly in a hard disk system

Magneto-resistive effect device having a spacer layer of a semiconductor layer interposed between first and second nonmagnetic metal layers and a work function control layer for use in a thin-film magnetic head usable in a head gimbal assembly in a hard disk system

机译:磁阻效应器件,其具有插在第一和第二非磁性金属层之间的半导体层的隔离层以及用于薄膜磁头的功函数控制层,该薄膜磁头可用于硬盘系统中的磁头万向架组件

摘要

The invention provides a CPP-GMR device comprising a spacer layer. The spacer layer comprises a first nonmagnetic metal layer and a second nonmagnetic metal layer, each formed of a nonmagnetic metal material, and a semiconductor layer interposed between the first nonmagnetic metal layer and the second nonmagnetic metal layer, and further comprises a work function control layer formed between the first nonmagnetic metal layer and the semiconductor layer and/or between the second nonmagnetic metal layer and the semiconductor layer. The semiconductor layer is an n-type semiconductor, and the work function control layer is made of a material having a work function smaller than that of said first nonmagnetic metal layer, and said second nonmagnetic metal layer. It is thus possible to obtain by far more improved advantages.
机译:本发明提供了一种包括间隔层的CPP-GMR器件。间隔层包括分别由非磁性金属材料形成的第一非磁性金属层和第二非磁性金属层以及介于第一非磁性金属层和第二非磁性金属层之间的半导体层,并且还包括功函数控制层。在第一非磁性金属层和半导体层之间和/或在第二非磁性金属层和半导体层之间形成第一绝缘层。半导体层是n型半导体,并且功函数控制层由功函数小于所述第一非磁性金属层和所述第二非磁性金属层的材料制成。因此,可以获得远远更多的优点。

著录项

相似文献

  • 专利
  • 外文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号