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Systems and methods for fabricating nanometric-scale semiconductor devices with dual-stress layers using double-stress oxide/nitride stacks
Systems and methods for fabricating nanometric-scale semiconductor devices with dual-stress layers using double-stress oxide/nitride stacks
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机译:使用双应力氧化物/氮化物叠层制造具有双应力层的纳米级半导体器件的系统和方法
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摘要
Systems and methods for fabricating semiconductor devices with dual-stress layers using double-stress oxide/nitride stacks. A method comprises providing NMOS and PMOS regions, selectively forming a dual-stack tensile stress layer over the NMOS region by depositing a tensile silicon nitride layer over the NMOS and PMOS regions, depositing a tensile silicon oxide layer over the tensile silicon nitride layer, removing a portion of the tensile silicon oxide layer from the PMOS region, and removing a portion of the tensile silicon nitride layer from the NMOS region and selectively forming a dual stack compressive stress layer over the PMOS region by depositing a compressive silicon nitride layer over the NMOS and PMOS regions, depositing a compressive silicon oxide layer over the compressive silicon nitride layer, removing a portion of the compressive silicon oxide layer from the NMOS region, and removing a portion of the compressive silicon nitride layer from the NMOS region.
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