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Semiconductor device with spacer having batch and non-batch layers
Semiconductor device with spacer having batch and non-batch layers
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机译:具有具有批和非批层的间隔物的半导体器件
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摘要
A semiconductor device including a gate stack located over a substrate and a spacer located over the substrate and adjacent the gate stack. The spacer includes a plurality of layers, wherein at least one of the plurality of layers is a batch layer and at least one of the plurality of layers is a non-batch layer.
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