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机译:溶液处理的金属氧化物半导体及其器件的超薄层中的量子能态签名
Department of Physics Blackett Laboratory Imperial College London London SW7 2AZ, UK;
Department of Physics Blackett Laboratory Imperial College London London SW7 2AZ, UK,Dutch Polymer Institute (DPI) P. O. Box 902, 5600, AX, Eindhoven, The Netherlands;
Materials Science and Engineering Division of Physical Sciences and Engineering King Abdullah University of Science and Technology Thuwal 23955-6900, Saudi Arabia;
Cornell High Energy Synchrotron Source Cornell University Ithaca, NY 14850, USA;
Department of Physics Blackett Laboratory Imperial College London London SW7 2AZ, UK;
Department of Physics Blackett Laboratory Imperial College London London SW7 2AZ, UK;
Foundation for Research and Technology Hellas (FORTH) Institute of Electronic Structure and Lasers (IESL) Heraklion Crete and Institute of Chemical Engineering Sciences (ICEHT) Patras, Greece;
Foundation for Research and Technology Hellas (FORTH) Institute of Electronic Structure and Lasers (IESL) Heraklion Crete and Institute of Chemical Engineering Sciences (ICEHT) Patras, Greece;
Department of Materials Royal School of Mines Imperial College London London SW7 2AZ, UK;
Foundation for Research and Technology Hellas (FORTH) Institute of Electronic Structure and Lasers (IESL) Heraklion Crete and Institute of Chemical Engineering Sciences (ICEHT) Patras, Greece;
Materials Science and Engineering Division of Physical Sciences and Engineering King Abdullah University of Science and Technology Thuwal 23955-6900, Saudi Arabia;
Department of Physics Blackett Laboratory Imperial College London London SW7 2AZ, UK;
机译:超薄GE3N4钝化层对HFO2 / GE金属氧化物半导体器件结构,界面和电性能的影响
机译:超薄GE3N4钝化层对HFO2 / GE金属氧化物半导体器件结构,界面和电性能的影响
机译:硅金属氧化物半导体器件中SiO2,Al2O3和BeO超薄界面势垒层的比较研究
机译:氧化铝作为(柔性)金属氧化物和2D半导体器件的介电和钝化层
机译:宽带隙金属氧化物半导体的电缺陷与器件性能的相关性
机译:具有固溶处理的金属氧化物半导体和介电膜的可穿戴式1 V工作薄膜晶体管通过低温深紫外光退火在低温下制成
机译:溶液处理的金属氧化物半导体及其器件的超薄层中的量子能态签名
机译:电气过压导致mOs(金属氧化物半导体)器件噪声特性的降低