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Process variation tolerant sense amplifier flop design
Process variation tolerant sense amplifier flop design
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机译:耐过程变化的读出放大器触发器设计
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摘要
One embodiment of the present invention sets forth a sense amplifier flop design that is tolerant of process variation. Specific staging of signal transitions through the sense amplifier flop circuit eliminate operational phases involving short-circuit currents between n-channel field-effect transistors (N-FETs) and p-channel field effect transistors (P-FETs) in a complementary-symmetry metal-oxide semiconductor process. By eliminating short-circuit currents between N-FETs and P-FETs within the sense amplifier flop, a large variation in conductivity ratio between N-FETs and P-FETs may be tolerated by the sense amplifier flop. This tolerance to conductivity ratio translates to a tolerance for process variation by the sense amplifier flop circuit.
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