A low-noise, process-variation-tolerant double-gate FinFET based sense amplifier

摘要

In this paper, we propose a new independent-gate, process-variation-tolerant double-gate (DC) FinFET based sense amplifier design. The new design exploits the DICE (dual interlock cell) latch and the back gate of a double-gate FinFET (DC FinFET) device for dynamic compensation against process variation. The proposed design improves the sensing delay and show excellent tolerance to process variations as compared to independent-gate sense amplifier (1GSA). The primary advantage of the proposed amplifier over previously reported sense amplifier is the low-noise voltage and large critical charge, making it more stable against single event upsets. Failure probability of the proposed design against process parameter variations is analyzed through Monte Carlo analysis.