首页>
外国专利>
Semiconductor device for measuring an overlay error, method for measuring an overlay error, lithographic apparatus and device manufacturing method
Semiconductor device for measuring an overlay error, method for measuring an overlay error, lithographic apparatus and device manufacturing method
展开▼
机译:用于测量覆盖误差的半导体器件,用于测量覆盖误差的方法,光刻设备和器件制造方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A semiconductor device for determining an overlay error on a semiconductor substrate includes a first and a second transistor. Each transistor includes two diffusion regions associated with a gate, the diffusion regions of each transistor being arranged in a first direction. The second transistor is arranged adjacent to the first transistor in a second direction perpendicular to the first direction. The first and second gate each have a non-uniform shape, and the second gate is oriented with respect to an orientation of the first gate in such a way that an effect of an overlay error on a device parameter of the second transistor has an opposite sign in comparison to an effect of the overlay error on a corresponding device parameter of the first transistor.
展开▼