Thin film capacitance element composition, high permittivity insulation film, thin film capacitance element, thin film multilayer capacitor and production method of thin film capacitance element

摘要

A thin film capacitance element composition, wherein a bismuth layer compound having a c-axis oriented vertically with respect to a substrate surface is expressed by a composition formula of (Bi₂O₂)²⁺(A_m−1B_mO_3m+1)²⁻ or Bi₂A_m−1B_mO_3m+3, wherein “m” is an even number, “A” is at least one element selected from Na, K, Pb, Ba, Sr, Ca and Bi, and “B” is at least one element selected from Fe, Co, Cr, Ga, Ti, Nb, Ta, Sb, V, Mo and W; and Bi in the bismuth layer compound is excessively included with respect to the composition formula of (Bi₂O₂)²⁺(A_m−1B_mO_3m+1)²⁻ or Bi₂A_m−1B_mO_3m+3, and the excessive content of Bi is in a range of 0Bi0.5×m mol in of Bi.