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Encapsulated silicidation for improved SiC processing and device yield
Encapsulated silicidation for improved SiC processing and device yield
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机译:封装硅化可提高SiC的加工效率和器件良率
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摘要
A method for producing a silicide contact. The method comprises the steps of depositing a metal on a SiC substrate; forming an encapsulating layer on deposited metal; and annealing said deposited metal to form a silicide contact. The encapsulating layer prevents agglomeration and formation of stringers during the annealing process.
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