In-situ co-deposition of Si in diffusion barrier material depositions with improved wettability, barrier efficiency, and device reliability

摘要

A copper interconnect having a transition metal-silicon-nitride barrier (106). A transition metal-nitride is co-deposited with Si by reactive sputtering in a Si containing ambient to form barrier (106). The copper (110) is then deposited over the transition metal-silicon-nitride barrier (108) with good adhesion.