首页> 外国专利> Double mill process for patterning current perpendicular to plane (CPP) magnetoresistive devices to minimize barrier shorting and barrier damage

Double mill process for patterning current perpendicular to plane (CPP) magnetoresistive devices to minimize barrier shorting and barrier damage

机译:双磨工艺,用于对垂直于平面(CPP)磁阻器件的电流进行构图,以最大程度地减少势垒短路和势垒损坏

摘要

A current perpendicular to plane (CPP) sensor and method of manufacturing such a sensor that prevents current shunting at the sides of the barrier/spacer layer due to redeposited material. A first ion mill is performed to remove at least the free layer. A quick glancing ion mill can be performed to remove the small amount of redep that may have accumulated on the sides of the free layer and barrier/spacer layer. Then an insulation layer is deposited to protect the sides of the free layer/barrier layer during subsequent manufacturing which can include further ion milling to define the rest of the sensor and another glancing ion mill to remove the redep formed by the further ion milling. This results in a sensor having no current shunting at the sides of the sensor and having no damage to the sensor layers.
机译:垂直于平面的电流(CPP)传感器及其制造方法,可防止由于重新沉积的材料而在阻挡层/隔离层的侧面造成电流分流。执行第一离子磨机以至少去除自由层。可以执行快速扫掠式离子磨机,以去除可能堆积在自由层和势垒/间隔层侧面的少量重做。然后,沉积绝缘层以在随后的制造期间保护自由层/阻挡层的侧面,该绝缘层可以包括进一步的离子研磨以限定传感器的其余部分,以及另一扫视离子研磨机以去除由进一步的离子研磨形成的重做。这导致传感器在传感器的侧面没有电流分流并且对传感器层没有损坏。

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