Giant magnetoresistance in Co2MnSi-Based Fully-Epitaxial Current-Perpendicular-to-Plane Magnetoresistive Devices

摘要

CO_2MnSi/NM/CO_2MnSi (NM = Cr, Ag) fully-epitaxial current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices were fabricated by UHV magnetron sputtering systems. The quantitative estimation based on Valet and Fert's 2-current model shows drastic enhancement of bulk spin-asymmetry coefficients from 0.38 to 0.72 after annealing a Co_2MnSi/Cr/Co_2MnSi device. The largest magnetoresistance (MR) ratio of 28.8% was observed at room temperature (RT) in a Co_2MnSi/Ag/Co_2MnSi device.