.BETA.-GA2O3 SINGLE CRYSTAL GROWING METHOD, THIN-FILM SINGLE CRYSTAL GROWING METHOD, GA2O3 LIGHT-EMITTING DEVICE, AND ITS MANUFACTURING METHOD

摘要

A method for growing a .beta.-Ga2O3 single crystal hardly cracking and havinga weakened twinning tendency and an improved crystallinity, a method forgrowing a thin-film single crystal with high quality, a Ga2O3 light-emittingdevice capable of emitting light in the ultraviolet region, and itsmanufacturing method are disclosed. In an infrared-heating single crystalmanufacturing system, a seed crystal and a polycrystalline material arerotated in mutually opposite directions and heated, and a .beta.-Ga2O3 singlecrystal is grown in one direction selected from among the a-axis 100direction, the b-axis 010 direction, and c-axis 001 direction. A thin filmof a .beta.-Ga2O3 single crystal is formed by PLD. A laser beam is applied toa target to excite atoms constituting the target. Ga atoms are released fromthe target by a thermal and photochemical action. The free Ga atoms are bondedto radicals in the atmosphere in the chamber. Thus, a thin-film of a .beta.-Ga2O3 single crystal is grown on a substrate of a .beta.-Ga2O3 single crystal.A light-emitting device comprises an n-type substrate produced by doping a.beta.-Ga2O3 single crystal with an n-type dopant and a p-type layer producedby doping the .beta.-Ga2O3 single crystal with a p-type dopant and junctionedto the top of the n-type substrate. The light-emitting device emits light fromthe junction portion.