METHOD AND SYSTEM FOR DEPOSITING SILICON CARBIDE FILM USING A GAS CLUSTER ION BEAM

摘要

A method for depositing material on a substrate (152, 252) is described. The method comprises maintaining a reduced-pressure environment around a substrate holder (150, 250) for holding a substrate (152, 252) having a surface, and holding the substrate (152, 252) securely within the reduced-pressure environment. Additionally, the method comprises forming a gas cluster ion beam (GCIB) (128) from a pressurized gas comprising a compound having silicon (Si) and carbon (C), accelerating the GCIB (128) to the reduced-pressure environment, and irradiating the accelerated GCIB (128) onto at least a portion of the surface of the substrate (152, 252) to form a thin film containing silicon and carbon, wherein the carbon content is greater than or equal to about 10%. Further, the compound may possess a Si-C bond.