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METHOD FOR REVEALING CRYSTALLINE DEFECTS AND/OR STRESS FIELD DEFECTS AT THE MOLECULAR ADHESION INTERFACE OF TWO SOLID MATERIALS
METHOD FOR REVEALING CRYSTALLINE DEFECTS AND/OR STRESS FIELD DEFECTS AT THE MOLECULAR ADHESION INTERFACE OF TWO SOLID MATERIALS
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机译:在两种固体材料的分子粘附界面处揭示晶体缺陷和/或应力场缺陷的方法
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摘要
The invention concerns a method for revealing defects or stresses in a structure, comprising the following steps: bonding by molecular adhesion a surface of a first element comprising crystalline material with the surface of a second element comprising crystalline material, such that said surfaces exhibit mismatched crystalline lattices, the bonding causing the formation of a lattice of crystalline and/or stress field defects inside a crystalline zone proximate to the bonding interface; thinning one of the elements until at least a thin film adhering to the other element along the bonding interface to form said structure is obtained, the thickness of the thin film being such that its free surface does not reveal the lattice of crystalline and/or stress field defects, the thickness of the thin film being such that the following step can be carried out; treating the thin film which results in its free surface revealing the lattice of crystalline and/or stress field defects.
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