首页> 外国专利> METHOD FOR REVEALING CRYSTALLINE DEFECTS AND/OR STRESS FIELD DEFECTS AT THE MOLECULAR ADHESION INTERFACE OF TWO SOLID MATERIALS

METHOD FOR REVEALING CRYSTALLINE DEFECTS AND/OR STRESS FIELD DEFECTS AT THE MOLECULAR ADHESION INTERFACE OF TWO SOLID MATERIALS

机译:在两种固体材料的分子粘附界面处揭示晶体缺陷和/或应力场缺陷的方法

摘要

The invention concerns a method for revealing defects or stresses in a structure, comprising the following steps: bonding by molecular adhesion a surface of a first element comprising crystalline material with the surface of a second element comprising crystalline material, such that said surfaces exhibit mismatched crystalline lattices, the bonding causing the formation of a lattice of crystalline and/or stress field defects inside a crystalline zone proximate to the bonding interface; thinning one of the elements until at least a thin film adhering to the other element along the bonding interface to form said structure is obtained, the thickness of the thin film being such that its free surface does not reveal the lattice of crystalline and/or stress field defects, the thickness of the thin film being such that the following step can be carried out; treating the thin film which results in its free surface revealing the lattice of crystalline and/or stress field defects.
机译:本发明涉及一种用于揭示结构中的缺陷或应力的方法,该方法包括以下步骤:通过分子粘附将包括晶体材料的第一元件的表面与包括晶体材料的第二元件的表面结合,使得所述表面表现出不匹配的晶体。晶格,该键合导致在靠近键合界面的结晶区内形成晶格缺陷和/或应力场缺陷的晶格;使一个元件变薄,直到至少一个薄膜沿着结合界面粘附到另一个元件上以形成所述结构,该薄膜的厚度应使其自由表面不露出晶格和/或应力晶格场缺陷,薄膜的厚度使得可以进行以下步骤;对薄膜进行处理会导致其自由表面暴露出晶格缺陷和/或应力场缺陷。

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