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First-principles calculations for charged defects at surfaces, interfaces, and two-dimensional materials in the presence of electric fields

机译:电场存在下表面,界面和二维材料上带电缺陷的第一性原理计算

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We present a methodology to calculate the formation energy of a charged defect at a surface, an interface, or a two-dimensional material in the presence of a macroscopic electric field. We demonstrate that the proposed formalism corrects for electrostatic artifacts in standard repeated-slab calculations and allows us to extract reliably the formation energy in the isolated defect limit independently of vacuum thickness, slab thickness, or lateral supercell size. The formalism does not enter the self-consistency loop of a density functional theory (DFT) calculation, but requires as input only the electrostatic potential of the converged calculation. Thus, employing the proposed scheme does not require any changes in the DFT code, but only a postprocessing module that we provide for various codes.
机译:我们提出了一种方法,可以在存在宏观电场的情况下计算表面,界面或二维材料上带电缺陷的形成能。我们证明了拟议的形式主义校正了标准重复平板计算中的静电伪影,并使我们能够可靠地提取独立缺陷极限中的形成能量,而与真空厚度,平板厚度或横向超级电池尺寸无关。形式主义不会进入密度泛函理论(DFT)计算的自洽回路,而是仅需要收敛计算的静电势作为输入。因此,采用提出的方案不需要DFT代码的任何更改,而只需要我们提供各种代码的后处理模块。

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  • 来源
    《Physical review》 |2018年第20期|205425.1-205425.16|共16页
  • 作者单位

    Max-Planck-Institut fuer Eisenforschung GmbH, Max-Planck-Straβe I, 40227 Duesseldorf, Germany;

    Max-Planck-Institut fuer Eisenforschung GmbH, Max-Planck-Straβe I, 40227 Duesseldorf, Germany;

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