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First-principles calculations for charged defects at surfaces, interfaces, and two-dimensional materials in the presence of electric fields

机译:在电场存在下,表面,界面和二维材料的带电缺陷的第一原理计算

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摘要

We present a methodology to calculate the formation energy of a charged defect at a surface, an interface, or a two-dimensional material in the presence of a macroscopic electric field. We demonstrate that the proposed formalism corrects for electrostatic artifacts in standard repeated-slab calculations and allows us to extract reliably the formation energy in the isolated defect limit independently of vacuum thickness, slab thickness, or lateral supercell size. The formalism does not enter the self-consistency loop of a density functional theory (DFT) calculation, but requires as input only the electrostatic potential of the converged calculation. Thus, employing the proposed scheme does not require any changes in the DFT code, but only a postprocessing module that we provide for various codes.
机译:我们提出了一种方法来计算在宏观电场存在下的表面,界面或二维材料处的带电缺陷的形成能量。 我们证明所提出的形式主义校正标准重复板计算中的静电伪像,并允许我们独立于真空厚度,平板厚度或横向超级尺寸可靠地提取分离的缺陷极限中的形成能量。 形式主义不进入密度泛函理论(DFT)计算的自我一致性循环,但需要仅作为融合计算的静电电位输入。 因此,采用所提出的方案不需要DFT代码的任何变化,而是只有我们提供各种代码的后处理模块。

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