Wafer pretreatment to decrease the deposition rate of silicon dioxide on silicon nitride in comparison to its deposition rate on a silicon substrate

摘要

A method of decreasing the growth rate of silicon dioxide films on a silicon nitride pad on a silicon wafer wherein the decrease in growth rate of the silicon dioxide results in a self-planarized film on the wafer is provided. Also provided is a method of pretreating said silicon wafer wherein said wafer is contacted with a chemical, such as hydrogen peroxide, isopropyl alcohol or acetone and air-dried prior to silicon dioxide deposition. Additionally, selective oxidation sub-atmospheric chemical vapor deposition (SELOX SACVD) uses an ozone-activated tetraethylorthosilicate process to deposit said silicon dioxide on said wafer.