Method for preparing a partially or fully semi-insulating or P-doped ZnO substrate, substrates obtained, and electronic, electro-optical or optoelectronic devices comprising same.

摘要

The process comprises contacting an n-doped ZnO substrate with molten anhydride salts at 350-500[deg] C for 5 hours. The molten anhydride salt is thermally dehydrated before contacting with the substrate at 450-500[deg] C, which is maintained constant for further treatments, for 24-48 hours. The contacting step is performed by immersion of the substrate in the molten salt. A surface layer of the n-doped ZnO substrate having a thickness of 500 nm to 1 mu m is transformed into p-doped ZnO substrate. An independent claim is included for a semi-insulating p-doped zinc oxide (ZnO) substrate.