Transistor mit Source and Drain Elektroden in Form von Drähten

摘要

The transistor has a semi-conductor material (50) connecting a source (4) to a drain (3). A gate (1) and an insulating layer (2) surround an assembly constituted by the source, the drain and the semi-conductor material. The insulating layer is arranged between the gate and the assembly. The drain and the source are constituted by first and second electrical conductors respectively, arranged in a parallel manner and disconnected, one from the other. The conductors are surrounded by a layer of the semi-conductor material over their entire circumference and on a part of their length.