Transistor mit Source and Drain Elektroden in Form von Drähten

摘要

field effect transistor comprising at least a grid (1), an insulation layer (2), a tube (3), a source (4), a semiconductor material (50) connecting the source (4) to the tube (3), the grid (1) and the insulation layer (2) for each combination of the source (4) and the drain (3) and the semiconductor material.the insulation layer (2) is arranged between the gate (1) and the whole.;the tube (3) and the source (4) are formed, respectively, a first and a second electrical conductors arranged in parallel and separated each other, the first and second conductors being surrounded by a layer of semiconductor material (50) on the outer circumference and at least a portion of their length.