首页> 外国专利> HIGH-PERFORMANCE PIEZOELECTRIC THICK FILM CONTAINING ROOM TEMPERATURE CONDUCTING FILM AND PREPARTION METHOD THEREOF

HIGH-PERFORMANCE PIEZOELECTRIC THICK FILM CONTAINING ROOM TEMPERATURE CONDUCTING FILM AND PREPARTION METHOD THEREOF

机译:含室温导热膜的高性能压电厚膜及其制备方法

摘要

PURPOSE: A high-performance piezoelectric thick film containing a room temperature conducting film and preparation method thereof are provided to prevent an oxidation of a metallic board in annealing process by depositing a conductivity oxide thick film on the substrate through an aerosol deposition. CONSTITUTION: In a high-performance piezoelectric thick film containing a room temperature conducting film and preparation method thereof, a room temperature conductive film is included between a metallic substrate and a PZT system piezoelectric thick film. The metal substrate is one of titanium, a stainless steel, a copper, a nickel and a nickel alloy, and the PZT system thick film is included of the Pb1+ a(Zrb,Ti1-b) O3 composition: an a has a range of 0.1 to 0 and b the range of 0.7 to 0.3. The PZT system piezoelectric thick film has the thickness of 0.1-100um.
机译:目的:提供一种包含室温导电膜的高性能压电厚膜及其制备方法,以通过在气溶胶沉积中在基板上沉积导电氧化物厚膜来防止金属板在退火过程中氧化。组成:一种高性能的压电厚膜,包含室温导电膜和其制备方法,室温导电膜包含在金属基板和PZT系统压电厚膜之间。金属基板是钛,不锈钢,铜,镍和镍合金中的一种,并且PZT系统厚膜包括Pb1 + a(Zrb,Ti1-b)O3组成:a的范围为0.1到0,b的范围是0.7到0.3。 PZT系统压电厚膜的厚度为0.1-100um。

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