Microstructural evolution and piezoelectric properties of thick Pb(Zr,Ti)O_3 films deposited by the multi-sputtering method: Part Ⅱ. Piezoelectric properties

摘要

Highly dense and crack-free Pb(Zr,Ti)O_3 (PZT) thick films with a controlled microstructure and orientation were deposited on a platinized silicon substrate by the radio frequency magnetron sputtering method using a single oxide target. The microstructure and orientation of the films were adjusted by applying a thin (100) PZT seed layer by the sol-gel method and subsequent repeated sputtering. When a thin layer was deposited on the seed layer, the film had small grains with a columnar structure. However, as the film became thicker, it developed a large and non-columnar grain structure. Therefore, reducing the thickness of the film per deposition allowed the columnar microstructure to be maintained. The (100) orientation of the film was able to be maintained by depositing at on a (100) oriented seed layer. PZT thick films with controlled orientations and microstructures were successfully deposited up to a thickness of about 5 μm, and their ferroelectric and piezoelectric properties were characterized.