机译:使用水热法在居里温度(240℃)低于居里温度(240℃)的自极化厚外延(K,Na)NbO_3薄膜的良好压电性
Department of Materials Science and Engineering Tokyo Institute of Technology Yokohama 226-8502 Japan;
Department of Materials Science and Engineering Tokyo Institute of Technology Yokohama 226-8502 Japan;
Department of Materials Science and Engineering Tokyo Institute of Technology Yokohama 226-8502 Japan;
Department of Materials Science and Engineering Tokyo Institute of Technology Yokohama 226-8502 Japan Research Center for Functional Materials National Institute for Materials Science (NIMS) Tsukuba 305-0044 Japan;
Department of Electrical and Electronic Engineering Tokyo Institute of Technology Yokohama 226-8502 Japan;
Department of Electrical and Electronic Engineering Tokyo Institute of Technology Yokohama 226-8502 Japan;
Department of Materials and Life Sciences Sophia University Tokyo 102-8554 Japan;
Department of Institute for Materials Research Tohoku University Sendai 980-8577 Japan;
Department of Institute for Materials Research Tohoku University Sendai 980-8577 Japan;
Department of Institute for Materials Research Tohoku University Sendai 980-8577 Japan;
Department of Physics and Electronics Osaka Prefecture University Osaka 599-8531 Japan;
Department of Materials Science and Engineering Tokyo Institute of Technology Yokohama 226-8502 Japan;
机译:直接和逆横向压电性能对通过水热法生长的自极化外延(K_XNA_(1_X))NBO_3膜中的组合物的依赖性
机译:水热法沉积(111)取向外延(K_(0.5)Na_(0.5))NbO_3厚膜的表征
机译:水热法在金属基底上制备(K,Na)NbO_3厚膜的铁电和压电性能
机译:Perovskite松弛剂铁电厚膜通过低温水热过程直接从氧化物前体生长
机译:硅上的外延压电厚膜异质结构。
机译:在不同温度下通过脉冲激光沉积在AlN / Si异质结构上外延生长的GaN薄膜的微观结构和生长机理
机译:衬底温度对掺Gd掺杂EuO薄膜居里温度和载流子密度的影响
机译:基于低温生长的外延Gaas薄膜的大动态范围,皮秒分辨率辐射检测