首页> 外国专利> UNIT FOR CONTROLLING MAGNETIC FIELD FORMING AND A MAGNETRON SPUTTERING APPARATUS AND A MAGNETRON SPUTTERING METHOD USING THE SAME, CAPABLE OF PERFORMING UNIFORM DEGREE OF DEPOSITION

UNIT FOR CONTROLLING MAGNETIC FIELD FORMING AND A MAGNETRON SPUTTERING APPARATUS AND A MAGNETRON SPUTTERING METHOD USING THE SAME, CAPABLE OF PERFORMING UNIFORM DEGREE OF DEPOSITION

机译:用于控制磁场形成的单元和磁控溅射装置以及使用该单元的磁控溅射方法和能够执行均匀沉积度的磁控溅射装置

摘要

PURPOSE: A unit for controlling magnetic field forming and a magnetron sputtering apparatus and a magnetron sputtering method using the same are provided to prevent the magnetization of a target after supporting process.;CONSTITUTION: A magnetron sputtering apparatus comprises a processing chamber(100), a target(200), a magnetic field forming unit(400), a process control unit(500), and a controller for magnetic field forming unit(600). The magnetic field form unit supplies constant magnetic field to target. The target is formed with a magnetic body. The target is deposited on the substrate. A controller for magnetic field forming unit receives an electrical signal from the outside.;COPYRIGHT KIPO 2010
机译:目的:提供一种用于控制磁场形成的装置和磁控溅射装置以及使用该装置的磁控溅射方法,以防止在支撑过程后靶材磁化。组成:磁控溅射装置包括处理室(100),靶(200),磁场形成单元(400),过程控制单元(500)和磁场形成单元的控制器(600)。磁场形成单元将恒定磁场提供给目标。靶由磁性体形成。靶沉积在基板上。磁场形成单元的控制器从外部接收电信号。; COPYRIGHT KIPO 2010

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